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Wide Bandgap Based Devices
GaNhigh-electron-mobility transistor (HEMT)ultra-wide band gapGaN-based vertical-cavity surface-emitting laser (VCSEL)composition-graded AlxGa1−xN electron blocking layer (EBL)electron leakageGaN laser diode
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Public-domain status shown for GLOBAL. DOAB open-access record with explicit license: CC-BY
Public-domain status shown for GLOBAL. DOAB open-access record with explicit license: CC-BY